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MBR3100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. * Low Reverse Current * Low Stored Charge, Majority Carrier Conduction * Low Power Loss/High Efficiency * Highly Stable Oxide Passivated Junction * Guard-Ring for Stress Protection * Low Forward Voltage * 150C Operating Junction Temperature * High Surge Capacity
Mechanical Characteristics:
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SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS
* Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead and Mounting Surface Temperature for Soldering Purposes: * * * *
220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: B3100
AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1
Leads are Readily Solderable
MARKING DIAGRAM
MBR 3100
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TA = 100C (RqJA = 28C/W, P.C. Board Mounting, see Note 2) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IO Max 100 Unit V
MBR3100 = Device Code
3.0
A
ORDERING INFORMATION
Device IFSM 150 A MBR3100 MBR3100RL TJ, Tstg -65 to +150 C
Preferred devices are recommended choices for future use and best overall value.
Package Axial Lead Axial Lead
Shipping 500 Units/Bag 1500/Tape & Reel
dv/dt
10
V/ns
(c) Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 3
Publication Order Number: MBR3100/D
MBR3100
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (see Note 2, Mounting Method 3) Symbol RJA Max 28 Unit C/W
ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted)
Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TL = 25C) (iF = 3.0 Amps, TL = 100C) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) TL = 25C TL = 100C 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Symbol vF 0.79 0.69 iR 0.6 20 mA Max Unit V
i , INSTANTANEOUS FORWARD CURRENT (AMPS) F
I , REVERSE CURRENT (mA) R
50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1
1 0.5 TJ = 150C 100C 25C 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 25C 0 10 20 70 30 40 50 60 80 VR REVERSE VOLTAGE (VOLTS) 90 100 125C 100C TJ = 150C
0.0005 0.0002 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.0001
0.05
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR.
, AVERAGE FORWARD CURRENT (AMPS)
P , AVERAGE POWER DISSIPATION (WATTS) F (AV)
8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 140 160 180 dc SQUARE WAVE
4 3.5 3 2.5 2 1.5 1 0.5 0 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) 5.0 SQUARE WAVE
dc
I
F (AV)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Current Derating (Mounting Method #3 per Note 2)
Figure 4. Power Dissipation
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MBR3100
400 300 C, CAPACITANCE (pF) 200
100 80
TJ = 25C f = 1 MHz
50 40 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance NOTE 2 -- MOUNTING DATA
Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 3 Lead Length, L (in) 1/8 50 58 1/4 51 59 28 1/2 53 61 3/4 55 63 RJA C/W C/W C/W
Mounting Method 1
P.C. Board where available copper surface is small.
L L
Mounting Method 2
Vector Push-In Terminals T-28
Mounting Method 3
P.C. Board with 2-1/2 X 2-1/2 copper surface.
L = 1/2''
Board Ground Plane
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MBR3100
PACKAGE DIMENSIONS AXIAL LEAD CASE 267-05 (DO-201AD) ISSUE G
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 ---
K D
1
A
2
B
K
STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE
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PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MBR3100/D

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